Cree/Wolfspeed Claims First-Ever 1,000-Volt SiC Unit
“Wolfspeed’s new 1000-volt silicon carbide metal–oxide–semiconductor field-effect transistor ‘offers system designers ultra-fast switching speeds with a fraction of a silicon MOSFET’s switching losses,’ says parent Cree.
A new MOSFET, said to be the industry’s first-ever 1,000-volt silicon carbide unit, can enable a 30% reduction in component count, a three-fold increase in power density, a 33% increase in output power – and lower cost, says manufacturer Wolfspeed, a Cree Company.
“Wolfspeed’s technology enables smaller, more efficient charging systems that provide higher power charging at lower overall cost,” Wolfspeed CTO John Palmour said in a release.
“This market requires high efficiency and wide output voltage range to address the various electric vehicle battery voltages being introduced by automotive suppliers,” he said.
‘Ultra-Fast Switching Speeds’
“Wolfspeed’s new 1000V SiC MOSFET offers system designers ultra-fast switching speeds with a fraction of a silicon MOSFET’s switching losses,” Palmour added.
“The figure-of-merit delivered by this device is beyond the reach of any competing silicon-based MOSFET.”
With silicon carbide, “Designers can reduce component count by moving from silicon-based, three-level topologies to simpler two-level topologies.” The company says.
MOSFET stands for metal-oxide-semiconductor field-effect transistor.
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Source: Cree/Wolfspeed with Fleets & Fuels follow-up